论文标题
通过外延菌株调整GDSB的频带拓扑
Tuning the Band Topology of GdSb by Epitaxial Strain
论文作者
论文摘要
受到静液压压力的稀土单核（RE-V）半晶体表现出有趣的趋势，磁性，磁有序和超导性，其理论可预测压力诱导的带逆转。然而，到目前为止，由于应变而没有直接关于RE-VS中的带顺序的直接实验报告。这项工作使用角度分辨光发射光谱（ARPES）和密度功能理论（DFT）研究了双轴紧张的GDSB（001）外延膜中带拓扑的演变。我们发现双轴应变会连续调节电子结构从拓扑上的微不足道到不足，从而减少了孔和沿[001]方向分散的电子带之间的间隙。在DFT和ARPES测量中看到的传导和价带移位是通过一个构成每个频段轨道对称性的紧密结合模型来解释的。最后，我们讨论了双轴应变对载体补偿和磁有序温度的影响。
Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in biaxially strained GdSb (001) epitaxial films using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). We find that biaxial strain continuously tunes the electronic structure from topologically trivial to nontrivial, reducing the gap between the hole and the electron bands dispersing along the [001] direction. The conduction and valence band shifts seen in DFT and ARPES measurements are explained by a tight-binding model that accounts for the orbital symmetry of each band. Finally, we discuss the effect of biaxial strain on carrier compensation and magnetic ordering temperature.
