论文标题
低温键合硅传感器P-N二极管的单方面耗竭的TCT研究
TCT investigation of the one-sided depletion of low-temperature covalently bonded silicon sensor P-N diodes
论文作者
论文摘要
在粒子探测器的背景下，低温共价晶圆粘结键可以将高Z材料作为吸收层与标准CMOS过程中产生的读出芯片的吸收层集成。这使得像新型高效X射线成像传感器的制造一样。为了研究共价键对此类传感器中产生的信号的影响，先前已经产生了晶圆粘结的硅硅硅硅硅二极管二极管。这些测试样品的行为正在通过瞬态电流技术（TCT）测量进行研究。在本文中，我们介绍了TCT设置以及用于这些测量的自定义三明治型样品持有人。对先前论文中提出的结果的回顾表明，粘结的P-N结构在反向偏置下显示出高度不对称的耗竭行为。 IR边缘TCT测量结果证实，仅样品的P侧被耗尽。
In the context of particle detectors, low-temperature covalent wafer-wafer bonding allows for integration of high-Z materials as absorbing layers with readout chips produced in standard CMOS processes. This enables for instance the fabrication of novel highly efficient X-ray imaging sensors. In order to investigate the effects of the covalent bonding on the signal generated in such sensors, wafer-wafer bonded silicon-silicon P-N pad diodes have previously been produced. The behaviour of these test samples is being investigated with transient current technique (TCT) measurements. In this paper we present an overview of the TCT setup as well as a custom sandwich-type sample holder used for these measurements. A review of the results presented in a previous paper shows, that the bonded P-N structures show a highly asymmetric depletion behaviour under reverse bias. IR edge TCT measurements confirm that only the P-side of the samples is being depleted.
