论文标题

低表面介电损耗的超导式旋转矩子的形状优化

Shape optimization of superconducting transmon qubit for low surface dielectric loss

论文作者

Eun, Sungjun, Park, Seong Hyeon, Seo, Kyungsik, Choi, Kibum, Hahn, Seungyong

论文摘要

超导式旋转量子标式的表面介电损失被认为是逆转的主要来源之一。众所周知,减少表面介电量子的表面介电损失是实现高质量因素和较长放松时间的巨大挑战($ t_ {1} $)。更改Transmon Qubit的电容器垫和连接线的几何形状使设计表介电损耗成为可能。在本文中,我们介绍了减少transmon量子量子表面介电损耗的形状优化方法。 TransMon值的电容器垫和连接线形状为样条曲线,并通过有限元方法和全局优化算法的组合进行了优化。然后,我们比较了表面参与率,该比例代表了每个介电层中存储的电能的一部分,并与两级系统(TLS)损失,优化结构和现有几何形状成正比,以显示我们方法的有效性。结果表明,与以前的设计相比,通过形状优化的设计,电容器垫和连接线的参与比可以降低16%和26%,而整体足迹和非谐波保持可接受的价值。结果,TLS受限的质量因子和相应的$ T_ {1} $增加了约21.6%。

Surface dielectric loss of superconducting transmon qubit is believed as one of the dominant sources of decoherence. Reducing surface dielectric loss of superconducting qubit is known to be a great challenge for achieving high quality factor and a long relaxation time ($T_{1}$). Changing the geometry of capacitor pads and junction wire of transmon qubit makes it possible to engineer the surface dielectric loss. In this paper, we present the shape optimization approach for reducing Surface dielectric loss in transmon qubit. The capacitor pad and junction wire of the transmon qubit are shaped as spline curves and optimized through the combination of the finite-element method and global optimization algorithm. Then, we compared the surface participation ratio, which represents the portion of electric energy stored in each dielectric layer and proportional to two-level system (TLS) loss, of optimized structure and existing geometries to show the effectiveness of our approach. The result suggests that the participation ratio of capacitor pad, and junction wire can be reduced by 16% and 26% compared to previous designs through shape optimization, while overall footprint and anharmonicity maintain acceptable value. As a result, the TLS-limited quality factor and corresponding $T_{1}$ were increased by approximately 21.6%.

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