论文标题
基于量子点的频率乘数
A quantum dot-based frequency multiplier
论文作者
论文摘要
硅提供了诱人的机会,可以在单个平台上整合混合量子量子计算系统。对于量子控制和读数,需要高频信号。因此,需要促进其一代的设备。在这里,我们提出了一个基于量子点的射频辐射乘数,该乘数在低温温度下运行。该设备基于其低维状态密度引起的量子点系统的非线性电容 - 电压特性。我们使用两种互补设备配置在多门硅纳米线晶体管中实现乘数:一个与电荷储存箱结合的单个量子点和一个耦合的双量子点。我们研究了谐波电压转换是能量引起的,乘法因子和谐波相位噪声的函数,并在理想性能接近10的乘法系数中找到了10个。我们的结果证明了一种可以很容易地集成到基于硅的量子计算系统中的高频转换方法,并应用于其他半径。
Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are required. Therefore, devices that can facilitate its generation are needed. Here, we present a quantum dot-based radiofrequency multiplier operated at cryogenic temperatures. The device is based on the non-linear capacitance-voltage characteristics of quantum dot systems arising from their low-dimensional density of states. We implement the multiplier in a multi-gate silicon nanowire transistor using two complementary device configurations: a single quantum dot coupled to a charge reservoir and a coupled double quantum dot. We study the harmonic voltage conversion as a function of energy detuning, multiplication factor and harmonic phase noise and find near ideal performance up to a multiplication factor of 10. Our results demonstrate a method for high-frequency conversion that could be readily integrated into silicon-based quantum computing systems and be applied to other semiconductors.