论文标题
在氧化的Cu/W界面处的大型自旋电荷互连的出现
Emergence of large spin-charge interconversion at an oxidized Cu/W interface
论文作者
论文摘要
旋转轨道设备可以通过利用自旋式互转换（SCI）来整合内存和逻辑，该互换（SCI）是通过设计和材料选择来优化的。在这些设备中，例如磁电旋转轨道（MESO）逻辑，界面是关键元素，因为它们可以禁止或促进设备中的自旋流以及具有旋转轨道耦合，从而导致界面SCI。在这里，我们研究了py/cu/w外侧自旋阀中SCI的起源，并量化其效率。 Cu和W电极之间界面的详尽表征可发现氧化层的存在（wo $ _x $）。我们确定SCI发生在Cu/wo $ _x $接口上，与温度无关的界面自旋传导电导率为$ g_ {|||} \ $ 20 $ 20 $ \ times $ 10 $ 10 $^{13}ω^{ - 1} m^{ - 1} m^{ - 2} $ andfacial spin-Charge $ charge toceitive $ capar-Charge $ capentivitive $ caperitive $ c} $ω^{ - 1} cm^{ - 1} $在10 k（$ - $ 830 $ω^{ - 1} cm^{ - 1} $ 300 k）。这对应于逆Edelstein长度$λ_{IEE} = - $ 0.76 nm时的效率，在10 K（300 K时$ - $ 0.4 nm），比金属/金属和金属/金属/氧化物界面和散装重金属大。这种氧化界面上的大SCI效率是MESO逻辑设备中磁性读数的有前途的候选者。
Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such as the magnetoelectric spin-orbit (MESO) logic, interfaces are crucial elements as they can prohibit or promote spin flow in a device as well as possess spin-orbit coupling resulting in interfacial SCI. Here, we study the origin of SCI in a Py/Cu/W lateral spin valve and quantify its efficiency. An exhaustive characterization of the interface between Cu and W electrodes uncovers the presence of an oxidized layer (WO$_x$). We determine that the SCI occurs at the Cu/WO$_x$ interface with a temperature-independent interfacial spin-loss conductance of $G_{||} \approx$ 20 $\times$ 10$^{13} Ω^{-1}m^{-2}$ and an interfacial spin-charge conductivity $σ_{SC}=-$1610 $Ω^{-1}cm^{-1}$ at 10 K ($-$830 $Ω^{-1}cm^{-1}$ at 300 K). This corresponds to an efficiency given by the inverse Edelstein length $λ_{IEE}=-$0.76 nm at 10 K ($-$0.4 nm at 300 K), which is remarkably larger than in metal/metal and metal/oxide interfaces and bulk heavy metals. The large SCI efficiency at such an oxidized interface is a promising candidate for the magnetic readout in MESO logic devices.
