论文标题
在混合纳米线设备中的Andreev绑定状态下进行动态库仑封锁的原位调整
In situ tuning of dynamical Coulomb blockade on Andreev bound states in hybrid nanowire devices
论文作者
论文摘要
量子设备中的电子相互作用可以表现出有趣的现象。一个例子是用片上电阻组装电子设备。该设备的电力定律通过电阻器引起的耗散相互作用（一种被称为动力学库仑封锁（DCB）的现象）在低能和温度下修饰。在电阻器定义的固定环境中，DCB强度通常不可调节。在这里，我们为Inas-Al杂交纳米线设计了一个片上电路，在该电路上可以原位对DCB强度进行闸门调节。 Inas-Al纳米线可以托管Andreev或Majoraana零能量状态。该技术使跟踪同一状态的演变，同时调整DCB强度从弱到强。我们观察到从零偏置电导峰到Andreev零能量状态的分裂峰的过渡。我们的技术为零能量状态上的原位调谐相互作用强度打开了大门。
Electron interactions in quantum devices can exhibit intriguing phenomena. One example is assembling an electronic device in series with an on-chip resistor. The quantum laws of electricity of the device is modified at low energies and temperatures by dissipative interactions induced by the resistor, a phenomenon known as dynamical Coulomb blockade (DCB). The DCB strength is usually non-adjustable in a fixed environment defined by the resistor. Here, we design an on-chip circuit for InAs-Al hybrid nanowires where the DCB strength can be gate-tuned in situ. InAs-Al nanowires could host Andreev or Majorana zero-energy states. This technique enables tracking the evolution of the same state while tuning the DCB strength from weak to strong. We observe the transition from a zero-bias conductance peak to split peaks for Andreev zero-energy states. Our technique opens the door to in situ tuning interaction strength on zero-energy states.
