论文标题
Fe $ _3 $ GATE $ _2 $/MOS $ _2 $/Fe $ _3 $ GATE $ _2 $ _2 $ 2D van der waals heterojunction设备
Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices
论文作者
论文摘要
在过去的几十年中，自旋阀效应一直是Spintronics的重点，因为它在许多Spintronic设备中的潜力。二维（2D）Van der Waals（VDW）材料高度期望建立自旋阀异质结。但是，VDW铁磁2D晶体的库里温度（TC）主要低于室温（〜30-220 K）。开发室温，铁磁（FM）2D晶体基于旋转阀门设备的开发非常具有挑战性。我们报告了第一个室温，FM 2D晶体基于ALL-2D VDW FE3GATE2/MOS2/FE3GATE2自旋阀设备。全能设备的磁场耐药性（MR）在2.3 k时高达15.89％，在10 K时为11.97％，在10 K，4-30倍的MR中，来自Fe $ _3 $ _3 $ GATE $ _2 $ _2 $ _2 $ _2 $ _2 $/MOS $ _2 $ _2 $ _2 $ _2 $ _3 $ _3 $ _3 $ gate $ gate $ _2 $ _2 $ _2 $ _2 $和传统的Nife Nife Nife Nife/Mos $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2美元。典型的自旋阀效应表现出对VDW异质结中MOS2间隔厚度的强烈依赖性。重要的是，旋转阀效应（0.31％）仍然在300 K处坚固，低工作电流低至10 Na（0.13 A/cm $^2 $）。结果为室温提供了一个一般的VDW平台，基于2D FM晶体的2D旋转阀设备。
Spin-valve effect has been the focus of spintronics over the last decades due to its potential in many spintronic devices. Two-dimensional (2D) van der Waals (vdW) materials are highly expected to build the spin-valve heterojunction. However, the Curie temperatures (TC) of the vdW ferromagnetic 2D crystals are mostly below room temperature (~30-220 K). It is very challenging to develop room temperature, ferromagnetic (FM) 2D crystals based spin-valve devices which are still not available to date. We report the first room temperature, FM 2D crystal based all-2D vdW Fe3GaTe2/MoS2/Fe3GaTe2 spin valve devices. The Magnetoresistance (MR) of the all- devices is up to 15.89% at 2.3 K and 11.97% at 10 K, 4-30 times of MR from the spin valves of Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ and conventional NiFe/MoS$_2$/NiFe. Typical spin valve effect shows strong dependence on MoS2 spacer thickness in the vdW heterojunction. Importantly, the spin valve effect (0.31%) still robustly exists at 300 K with low working currents down to 10 nA (0.13 A/cm$^2$). The results provide a general vdW platform to room temperature, 2D FM crystals based 2D spin valve devices.
