论文标题
纳米级冷源场晶体管的偏置密度晶体管的偏置密度晶体管工程
Bias-Independent Subthreshold Swing in Nanoscale Cold-Source Field-Effect Transistors by Drain Density-of-States Engineering
论文作者
论文摘要
我们报告了一种设计纳米级冷源场效应晶体管（CS-FET）的策略，该晶体效应晶体管（CS-FETS）具有独立于偏置的60 mV/dec子阈值Swing（SS）。通过第一原理的计算和量子 - 传输模拟，我们揭示了漏极和源电极之间状态密度（DOS）的能量比对对于实现无偏置独立的SS至关重要。通过定义“距离窗口”，我们提出了一个设备模型，以说明流失DOS的相似斜率如何落入距离窗口中，可以在不同的偏置下稳定SS。这项研究强调了DOS工程在具有偏置无依赖的SS的CS-FET中的重要性，用于便携式电子应用。
We report a strategy to design nanoscale cold-source field-effect transistors (CS-FETs) with bias-independent sub-60 mV/dec subthreshold swing (SS). By first-principles calculations and quantum-transport simulations, we reveal that the energy alignment of density of states (DOS) between the drain and source electrodes is critical to achieving bias-independent SS. By defining "gate window", we propose a device model to demonstrate how similar slopes of the drain DOS falling into the gate window can stabilize the SS under different bias. This study underscores the significance of drain DOS engineering in the design of CS-FETs with bias-independent SS for portable electronic applications.
