论文标题
使用GASB半导体光放大器和Si3n4光子学集成反射器，可调2 $ $ $ $ M杂交激光器
Widely tunable 2 $μ$m hybrid laser using GaSb semiconductor optical amplifiers and Si3N4 photonics integrated reflector
论文作者
论文摘要
可调激光器在2-3 $ $ m m波长范围内发射，并且与光子积分平台兼容，这对于传感应用非常感兴趣。为此，将基于汽油的半导体增益芯片与Si $ _3 $ n $ _4 $ _4 $光子集成电路相结合，提供了一个有吸引力的平台。本文中，我们利用Si $ _3 $ n $ _4 $ waveGuides的低损坏功能，并演示了一个混合激光器，其中包括一个由集成的可调SI $ _3 $ _3 $ _4 $ _4 $ vernier镜子组成的gasb增益芯片。在室温下，激光的最大输出功率为15 mW，调谐范围为80 nm（1937-2017 nm）。还验证了几种基本SI $ _3 $ n $ _4 $的低损坏性能。更具体地说，单模波导显示出低至0.15 dB/cm的传输损失，90 $^\ Circ $ bend的传输损失具有0.008 dB的损失，并且50/50 Y-Branch的插入损失为0.075 dB。
Tunable lasers emitting at a 2-3 $μ$m wavelength range and compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaSb-based semiconductor gain chips with Si$_3$N$_4$ photonic integrated circuits offers an attractive platform. Herein, we exploit the low-loss features of Si$_3$N$_4$ waveguides and demonstrate a hybrid laser comprising a GaSb gain chip with an integrated tunable Si$_3$N$_4$ Vernier mirror. At room temperature, the laser exhibited a maximum output power of 15 mW and a tuning range of 80 nm (1937-2017 nm). The low-loss performance of several fundamental Si$_3$N$_4$ building blocks for photonic integrated circuits is also validated. More specifically, the single-mode waveguide exhibit transmission loss as low as 0.15 dB/cm, the 90$^\circ$ bend has 0.008 dB loss, and the 50/50 Y-branch has an insertion loss of 0.075 dB.
