论文标题
部分可观测时空混沌系统的无模型预测
Surface-barrier detector with smoothly tunable thickness of depleted layer for study of ionization loss and dechanneling length of negatively charged particles channeling in a crystal
论文作者
论文摘要
提出了一种用于使用半导体表面轰炸探测器在通道状态下在晶体中移动的相对论负电荷颗粒的离子化损失的新方法，并提出了耗尽层的平稳调谐厚度。电离损耗只能在检测器的耗尽层中测量。平坦半导体检测器中耗尽层的厚度可以通过检测器的偏置电压的值来平滑调节。因此，可以沿检测器晶体中的相对论颗粒的电离损失的能量分布在检测器晶体中的通道状态下移动，以沿探测器偏置电压变化的颗粒路径进行测量。对于通道和非通道颗粒，电离损耗光谱应不同，并且可以确定两个部分。考虑了SI表面孔检测器 - 目标的应用。使用这种检测器进行的测量将使研究成为可能：电离通道的电离损失的能量分布，带负电荷的颗粒；电离损失的空间分布与通道颗粒的路径长度的关系；带负电的颗粒的切换长度；并清除颗粒在晶体中的重新传输的作用。实验数据与计算的比较可以有助于开发出晶体中带负电荷颗粒运动动态的描述。更好地理解脱流长度的特性可以有用，可用于在晶体中通过电子束和晶体漏剂的发育以及从同步器中电子束的基于晶体的提取电子束的产生。
A new method for the experimental study of ionization loss of relativistic negatively charged particles moving in a crystal in the channeling regime using a semiconductor surface-barrier detector with smoothly tunable thickness of the depleted layer is proposed. The ionization loss can only be measured in the depleted layer of the detector. The thickness of the depleted layer in a flat semiconductor detector can be smoothly regulated by the value of the bias voltage of the detector. Therefore, the energy distribution of the ionization loss of relativistic particles which cross the detector and move in the channeling regime in the detector crystal can be measured along the path of the particles at variation of the bias voltage of the detector. Ionization loss spectra should be different for channeling and nonchanneling particles, and both fractions can be determined. The application of a Si surface-barrier detector-target is considered. Measurements with such a detector would make it possible to study: the energy distribution of ionization loss of channeling negatively and positively charged particles; spatial distribution of ionization loss as a function of the path length of channeling particles; the dechanneling length of negatively charged particles; and to clear up the role of rechanneling of the particles in the crystal. Comparison of experimental data with calculations can help to develop a description of the dynamics of motion of negatively charged particles channeling in a crystal. A better understanding of the dechanneling length properties can be useful in the production of positrons and other particles such as neutrons by an electron beam in crystals, and in the development of crystalline undulators, and at a crystal-based extraction of electron beams from a synchrotron.
