论文标题
揭示NB/Bisbte $ _2 $ SE接口的内在超导性
Revealing intrinsic superconductivity of the Nb/BiSbTe$_2$Se interface
论文作者
论文摘要
通常，通过直接沉积超导体在拓扑绝缘体（TI）表面的顶部直接沉积，可以通过接近效应来达到拓扑超导性。在这里，我们观察并分析了约瑟夫森连接中的双重临界电流，该电流基于制造的平面超导量子干扰装置中的拓扑绝缘体。通过测量临界电流作为温度和磁场的函数，我们表明第二个临界电流源于S/Ti界面的内在超导性，该界面的固有超导性是由改良的电阻分流连接模型和透射电子显微镜研究支持的。当技术过程涉及Ar-plasma清洁时，应考虑到界面的这种复杂结构。
Typically, topological superconductivity is reachable via proximity effect by a direct deposition of superconductor (S) on top of a topological insulator (TI) surface. Here we observed and analyzed the double critical current in the Josephson junctions based on the topological insulator in the fabricated planar Superconducting Quantum Interference Device. By measuring critical currents as a function of temperature and magnetic field, we show that the second critical current stems from the intrinsic superconductivity of the S/TI interface, which is supported by the modified Resistively Shunted Junction model and Transmission Electron Microscopy studies. This complex structure of the interface should be taken into account when technological process involves Ar-plasma cleaning.
