论文标题
Nodal Line Semimetal Inbi的磁转运特性和费米表面拓扑
Magnetotransport Properties and Fermi Surface Topology of Nodal line Semimetal InBi
论文作者
论文摘要
在本研究中，我们讨论了拓扑结节线半度INBI的电阻率模式中的向上行为。我们认为，这种性质可以通过数学模型推广，该模型可以应用于表现出相似行为的任何化合物。从霍尔电导率估计的化合物中的载体补偿也可以通过载体补偿来解释极高的磁磁性（XMR）。此外，根据Subhnikov-De Haas（SDH）振荡和密度功能理论（DFT）的研究，我们获得了化合物INBI的完整三维（3D）FERMI表面拓扑。使用这些研究讨论了对载体行为的详细理解。我们还展开了每个电子和孔袋的拓扑及其可能通过电子和孔掺杂的调制。
In the present study, we have discussed the up-turn behavior in the resistivity pattern of the topological nodal line semimetal InBi. We argued that such nature could be generalized with a mathematical model, that can be applied to any compounds exhibiting similar behavior. The extremely high magnetoresistance (XMR) has also been explained by the carrier compensation in the compound, estimated from the Hall conductivity. Moreover, from the study of Subhnikov-de Haas (SdH) oscillation and density functional theory (DFT), we obtained the complete three-dimensional (3D) Fermi surface topology of the compound InBi. A detailed understanding of carriers' behavior has been discussed using those studies. We have also unfurled the topology of each electron and hole pocket and its possible modulation with electron and hole doping.
