论文标题
GAAS量子点在准无方便压力下：实验和理论
GaAs quantum dots under quasi-uniaxial stress: experiment and theory
论文作者
论文摘要
研究了最初无动于衷的GAA/藻类量子点的激子的光学特性，这是可变的准无原应力的函数。为了验证最先进的计算工具来描述纳米结构的光学特性，我们确定了量子点形态和量子点位置上外部诱导应变张量的平面成分。基于这些\ textsl {实验}参数，我们使用八波段$ {\ bf k} \ cdot {\ bf k} \ cdot {\ cdot {\ bf p} $使用配置Intefuration Intraporcation方法的八波段$ {\ bf k} \ cdot {\ bf k} \ cdot {\ bf k} \ cdot {\ bf k} \ cdot {\ bf k} \ cdot {\ bf k} \ cdot {\ bf k} \ cdot {\ bf k} \ cdot {\ bf k} \ cdot {通过我们的计算进行了定量复制实验观察结果，并讨论了偏差。
The optical properties of excitons confined in initially-unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasi-uniaxial stress. To allow the validation of state-of-the-art computational tools for describing the optical properties of nanostructures, we determine the quantum dot morphology and the in-plane components of externally induced strain tensor at the quantum dot positions. Based on these \textsl{experimental} parameters, we calculate the strain-dependent excitonic emission energy, degree of linear polarization, and fine-structure splitting using a combination of eight-band ${\bf k}\cdot{\bf p}$ formalism with multiparticle corrections using the configuration interaction method. The experimental observations are quantitatively well reproduced by our calculations and deviations are discussed.
