论文标题
短路下的非挥发性电化学随机记忆
Nonvolatile Electrochemical Random-Access Memory Under Short Circuit
论文作者
论文摘要
电化学随机访问记忆（ECRAM）是一种用于内存计算的最近开发且高度有希望的模拟电阻记忆元件。 ECRAM的一个长期挑战是在几个小时内获得保留时间。这种简短的保留使ECRAM无法被考虑在深神经网络中进行推理分类，这可能是进行内存计算的最大机会。在这项工作中，我们开发了一个ECRAM单元，其保留率的保留率比以前的保留长，并且预计在85c时将超过10年。我们假设这种特殊保留的起源是相位分离，它可以形成多个有效的平衡抗性状态。这项工作突出了使用相位分离来产生ECRAM细胞的承诺和机会，并具有特殊且潜在的永久保留时间。
Electrochemical random-access memory (ECRAM) is a recently developed and highly promising analog resistive memory element for in-memory computing. One longstanding challenge of ECRAM is attaining retention time beyond a few hours. This short retention has precluded ECRAM from being considered for inference classification in deep neural networks, which is likely the largest opportunity for in-memory computing. In this work, we develop an ECRAM cell with orders of magnitude longer retention than previously achieved, and which we anticipate to exceed 10 years at 85C. We hypothesize that the origin of this exceptional retention is phase separation, which enables the formation of multiple effectively equilibrium resistance states. This work highlights the promises and opportunities to use phase separation to yield ECRAM cells with exceptionally long, and potentially permanent, retention times.
