论文标题
宽超导膜中边缘屏障的空间表征
Spatial characterization of the edge barrier in wide superconducting films
论文作者
论文摘要
在弱磁场中，在宽的超导薄膜条中讨论了电流引起的超导性破坏，其宽度大于磁场渗透深度。特别注意边缘电势屏障（豆 - 烯层屏障）在临界状态形成中的作用，并检测负责这种临界状态的边缘，其外部垂直磁场和运输电流的不同相互取向。使用薄膜薄膜条的临界和电阻状态使用溶解空间的低温激光扫描显微镜（LTLSM）方法可视化，该方法能够检测薄膜边缘上的临界电流定义区域。基于这些观察结果，开发了一种简单的技术，用于研究每个膜边缘处的临界状态，并估计低温器中的残留磁场。所提出的方法仅需要记录弱磁场中薄膜的电流特性，从而规定了对复杂LTLSM技术的需求。因此，获得的信息对于解释超导薄膜单光子光发射探测器的研究尤其重要。
The current-induced destruction of superconductivity is discussed in wide superconducting thin film strips, whose width is greater than the magnetic field penetration depth, in weak magnetic fields. Particular attention is paid to the role of the edge potential barrier (the Bean-Livingston barrier) in critical state formation and detection of the edge responsible for this critical state with different mutual orientations of external perpendicular magnetic field and transport current. Critical and resistive states of the thin film strip were visualized using the space-resolving low-temperature laser scanning microscopy (LTLSM) method, which enables detection of critical current-determining areas on the thin film edges. Based on these observations, a simple technique was developed for investigation of the critical state separately at each film edge, and for the estimation of residual magnetic fields in cryostats. The proposed method only requires recording of the current-voltage characteristics of the thin film in a weak magnetic field, thus circumventing the need for complex LTLSM techniques. Information thus obtained is particularly important for interpretation of studies of superconducting thin film single-photon light emission detectors.
