论文标题

了解BAZRS的生长机制$ _3 $ Chalcogenide Perovskite薄膜来自硫磺氧化物前体

Understanding the growth mechanism of BaZrS$_3$ chalcogenide perovskite thin films from sulfurized oxide precursors

论文作者

Ramanandan, Santhanu Panikar, Giunto, Andrea, Stutz, Elias Z., Reyner, Benoit Xavier Marie, Lefevre, Iléane Tiphaine Françoise Marie, Rusu, Marin, Schorr, Susan, Unold, Thomas, Morral, Anna Fontcuberta i, Prieto, José Márquez, Dimitrievska, Mirjana

论文摘要

硫化钡硫化钡(BAZRS3)是一种土壤丰富且环保的硫元素钙钛矿,具有各种能量转化应用的有前途的特性。最近,氧化物前体的硫化是有效合成的可行解决方案,尤其是从规避处理碱金属难度的角度来看。在这项工作中,我们详细探讨了Ba-Zr-O氧化物前体膜在700°C至1000°C的温度下硫化的BAZRS3的合成。我们基于涉及BAZRO3晶相的中间非晶化步骤的两步反应提出了BAZRS3的形成机理。我们展示了在膜中硫的扩散是该反应的限速步骤。加工温度在确定从氧化物到硫化物相的总比例以持续的含硫H2S气体的恒定流速作为反应物的恒定流速中起着关键作用。最后,即使在富含ZR的前体条件下,我们也观察到化学计量BAZRS3(1:1:3)的形成,并形成ZRO2作为次相。这标志着bazrs3在其他类型的葡萄糖生成层中非常独特,例如辣椒和kesterites,它们可以容纳相当多的非岩石计量成分。这项工作为进一步优化BAZRS3合成过程开辟了一条途径,从而拉直了该材料未来应用的途径。

Barium zirconium sulfide (BaZrS3) is an earth-abundant and environmentally friendly chalcogenide perovskite with promising properties for various energy conversion applications. Recently, sulfurization of oxide precursors has been suggested as a viable solution for effective synthesis, especially from the perspective of circumventing the difficulty of handling alkali earth metals. In this work, we explore in detail the synthesis of BaZrS3 from Ba-Zr-O oxide precursor films sulfurized at temperatures ranging from 700 °C to 1000 °C. We propose a formation mechanism of BaZrS3 based on a two-step reaction involving an intermediate amorphization step of the BaZrO3 crystalline phase. We show how the diffusion of sulfur (S) species in the film is the rate-limiting step of this reaction. The processing temperature plays a key role in determining the total fraction of conversion from oxide to sulfide phase at a constant flow rate of the sulfur-containing H2S gas used as a reactant. Finally, we observe the formation of stoichiometric BaZrS3 (1:1:3), even under Zr-rich precursor conditions, with the formation of ZrO2 as a secondary phase. This marks BaZrS3 quite unique among the other types of chalcogenides, such as chalcopyrites and kesterites, which can instead accommodate quite a large range of non-stoichiometric compositions. This work opens up a pathway for further optimization of the BaZrS3 synthesis process, straightening the route towards future applications of this material.

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