论文标题
HMM-V:虚拟化的异构内存管理
HMM-V: Heterogeneous Memory Management for Virtualization
论文作者
论文摘要
虚拟机(VM)的内存需求正在增加,而DRAM的容量有限和功耗很高。非挥发记忆(NVM)是DRAM的替代品,但具有很高的潜伏期和低的带宽。我们观察到,与DRAM VM相比,具有异质内存的VM可能会产生高达$ 1.5 \ times $ hlowdown的速度,即使管理不善。但是,最新的异质内存管理设计均未在真实系统上进行虚拟化定制。 在本文中,我们提出了HMM-V,这是用于虚拟化的异质内存管理系统。 HMM-V自动确定页面热度,并在DRAM和NVM之间迁移页面,以在接近DRAM系统的情况下实现性能。首先,HMM-V通过页面表操作跟踪内存访问,但通过利用Intel Page-Modification Logging(PML)和多级队列来降低成本。其次,HMM-V量化了页面的``温度'',并用铲斗量表确定热点。然后,hmm-v有效地迁移页面,并在PML的帮助下暂停暂停并处理肮脏的页面。最后,HMM-V提供了汇总管理,以平衡多个VM的宝贵DRAM,以最大程度地利用和整体性能。 HMM-V在具有Intel Optane DC持久内存的真实系统上实现。四VM共同运行的结果表明,HMM-V的表现分别优于NUMA平衡和硬件管理(Intel Optane Memory Mode),分别为$ 51 \%$和$ 31 \%$。
The memory demand of virtual machines (VMs) is increasing, while DRAM has limited capacity and high power consumption. Non-volatile memory (NVM) is an alternative to DRAM, but it has high latency and low bandwidth. We observe that the VM with heterogeneous memory may incur up to a $1.5\times$ slowdown compared to a DRAM VM, if not managed well. However, none of the state-of-the-art heterogeneous memory management designs are customized for virtualization on a real system. In this paper, we propose HMM-V, a Heterogeneous Memory Management system for Virtualization. HMM-V automatically determines page hotness and migrates pages between DRAM and NVM to achieve performance close to the DRAM system. First, HMM-V tracks memory accesses through page table manipulation, but reduces the cost by leveraging Intel page-modification logging (PML) and a multi-level queue. Second, HMM-V quantifies the ``temperature'' of page and determines the hot set with bucket-sorting. HMM-V then efficiently migrates pages with minimal access pause and handles dirty pages with the assistance of PML. Finally, HMM-V provides pooling management to balance precious DRAM across multiple VMs to maximize utilization and overall performance. HMM-V is implemented on a real system with Intel Optane DC persistent memory. The four-VM co-running results show that HMM-V outperforms NUMA balancing and hardware management (Intel Optane memory mode) by $51\%$ and $31\%$, respectively.