论文标题
瑕疵对$δ$ layer连接处的隧道率的影响
Influence of imperfections on tunneling rate in $δ$-layer junctions
论文作者
论文摘要
使用扫描隧道显微镜在半导体中的原子精确放置已被用于创建基于平面掺杂剂的设备，从而探索了新型的经典或量子计算概念，这些概念通常需要精确控制其操作中对隧道速度的控制。虽然可以将掺杂剂的几何形状定义为亚纳米计的精度，但缺陷仍然可以在确定隧道速率中起重要作用。在这里，我们研究了硅中磷$δ$ layer隧道连接中不同瑕疵的影响：$Δ$ - 层厚度和隧道间隙宽度，界面粗糙度和带电杂质的变化。据发现，尽管大多数缺陷都适度地影响了隧道速率，但隧道间隙中的单个充电杂质也可以将隧道速率更改超过一个数量级，即使对于相对较大的隧道间隙也是如此。此外，还揭示了隧道速率在很大程度上取决于杂质的电荷标志。
The atomically precise placement of dopants in semiconductors using scanning tunneling microscopes has been used to create planar dopant-based devices, enabling the exploration of novel classical or quantum computing concepts, which often require precise control over tunneling rates in their operation. While the geometry of the dopants can be defined to sub-nanometer precision, imperfections can still play a significant role in determining the tunneling rates. Here, we investigate the influence of different imperfections in phosphorous $δ$-layer tunnel junctions in silicon: variations of $δ$-layer thickness and tunnel gap width, interface roughness, and charged impurities. It is found that while most of the imperfections moderately affect the tunneling rate, a single charged impurity in the tunnel gap can alter the tunneling rate by more than an order of magnitude, even for relatively large tunnel gaps. Moreover, it is also revealed that the tunneling rate strongly depends on the electrical charge sign of the impurity.
