论文标题
拓扑绝缘子表面上的Rashba旋转分裂的大双线性磁力
Large Bilinear Magnetoresistance from Rashba Spin-Splitting on the Surface of a Topological Insulator
论文作者
论文摘要
除了拓扑保护的线性色散外，还发现带有带弯曲的二维电子气体具有可调的Rashba旋转分解（RSS）与拓扑绝缘子（TIS）的拓扑表面状态共存。在这里，我们报告了用过渡金属原子装饰的BI2SE3膜中大型双线性磁磁性（BMR）的观察。 BMR的大小敏感取决于沉积的原子的类型和数量，其最大实现的值接近了强烈的Rashba半导体。我们的第一原理计算重现了量子井状态，并在所有BI2SE3异质结构中揭示了相当大的RSS，并且反转对称性损坏。我们的结果表明，可以通过表面原子沉积对TIS中RSS状态的电荷旋转互连进行微调，并通过BMR轻松检测到潜在的旋转器应用。
In addition to the topologically protected linear dispersion, a band-bending-confined two-dimensional electron gas with tunable Rashba spin-splitting (RSS) was found to coexist with the topological surface states on the surface of topological insulators (TIs). Here, we report the observation of large bilinear magnetoresistance (BMR) in Bi2Se3 films decorated with transition metal atoms. The magnitude of the BMR sensitively depends on the type and amount of atoms deposited, with a maximum achieved value close to those of strong Rashba semiconductors. Our first-principles calculations reproduce the quantum well states and reveal sizable RSS in all Bi2Se3 heterostructures with broken inversion symmetry. Our results show that charge-spin interconversion through RSS states in TIs can be fine-tuned through surface atom deposition and easily detected via BMR for potential spintronic applications.
