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Achieving electrical injection of exciton-polaritons, half-light, half-matter quasiparticles arising from the strong coupling between photonic and excitonic resonances, is a crucial milestone to scale up polaritonic devices such as optical computers, quantum simulators and inversionless lasers. Here we present a new approach to achieve strong coupling between electrically injected excitons and photonic bound states in the continuum of a dielectric metasurface monolithically patterned in the channel of a light-emitting transistor. Exciton-polaritons are generated by coupling electrically injected excitons in the gate-induced transport channel with a Bloch mode of the metasurface, and decay into photons emitted from the top surface of the transistor. Thanks to the high-finesse of the metasurface cavity, we achieve a large Rabi splitting of ~200 meV and more than 50-fold enhancement of the polaritonic emission over the intrinsic excitonic emission of the perovskite film. Moreover, we show that the directionality of polaritonic electroluminescence can be dynamically tuned by varying the source-drain bias which controls the radiative recombination zone of the excitons. We argue that this approach provides a new platform to study strong light-matter interaction in dispersion engineered photonic cavities under electrical injection, and paves the way to solution-processed electrically pumped polariton lasers.