论文标题

二维Janus Si Dialcogenides:第一原理研究

Two-dimensional Janus Si dichalcogenides: A first-principles study

论文作者

Guo, San-Dong, Feng, Xu-Kun, Zhu, Yu-Tong, Wang, Guangzhao, Yang, Shengyuan A.

论文摘要

强大的结构不对称性在二维(2D)材料中进行了积极探索,因为它可以引起许多有趣的物理特性。通过最近合成单层$ \ mathrm {si_2te_2} $的促进,我们探索了一个2D材料的家族,称为Janus Si Dichalcogenides(JSD),与Janus Transition Metal Dichalcogenides和表现出更强大的倒置不对称。使用第一原理计算,我们证明了这些材料的出色稳定性。我们表明,它们的强结构不对称会导致明显的内在极性场,由于自旋轨道耦合而引起的相当大的自旋分裂以及大型的压电反应。自旋分裂涉及平面外部成分,这超出了线性Rashba模型。压电张量在平面内$ d_ {11} $系数和平面外$ d_ {31} $系数中都具有很大的价值,这使单层JSD在现有的2D Piezoelectrics中与众不同。此外,我们发现这些材料中有趣的应变诱导的相变。特别是,在传统带中有多个山谷竞争最低传导带的竞争,这将导致应变下的光学和运输特性的显着变化。我们的工作揭示了一个新的基于SI的2D材料系列,可以在Spintronic和Piezoelectric设备中找到有希望的应用。

Strong structural asymmetry is actively explored in two-dimensional (2D) materials, because it can give rise to many interesting physical properties. Motivated by the recent synthesis of monolayer $\mathrm{Si_2Te_2}$, we explore a family of 2D materials, termed as the Janus Si dichalcogenides (JSD), which parallel the Janus transition metal dichalcogenides and exhibit even stronger inversion asymmetry. Using first-principles calculations, we demonstrate excellent stability of these materials. We show that their strong structural asymmetry leads to pronounced intrinsic polar field, sizable spin splitting due to spin-orbit coupling, and large piezoelectric response. The spin splitting involves an out-of-plane component, which is beyond the linear Rashba model. The piezoelectric tensor has large value in both in-plane $d_{11}$ coefficient and out-of-plane $d_{31}$ coefficient, making the monolayer JSDs distinct among the existing 2D piezoelectrics. In addition, we find interesting strain-induced phase transitions in these materials. Particularly, there are multiple valleys in the conduction band that compete for the conduction band minimum, which will lead to notable changes in optical and transport properties under strain. Our work reveals a new family of Si based 2D materials, which could find promising applications in spintronic and piezoelectric devices.

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