论文标题
无间隙状态和当前控制的封闭式三层石墨烯中的当前控制
Gapless states and current control in strongly distorted gated trilayer graphene
论文作者
论文摘要
我们研究了门控的三层石墨烯部分没有外层，并形成了由单层石墨烯连接的两个三层的系统。三层堆叠顺序的差异导致无间隙状态的出现，其中之一主要定位在单个石墨烯层中。我们证明，通过更改应用于外层的栅极电压的值，一个人可以更改该状态的E（k）的斜率。结果，也可以更改单层石墨烯中流动流动的方向，这种效果在实际应用中可能有用。
We investigate gated trilayer graphene partially devoid of outer layers and forming a system of two trilayers connected by a single layer of graphene. A difference in the stacking order of trilayers leads to the appearance of gapless states, one of which is mainly localized in the single graphene layer. We demonstrate that by changing the value of the gate voltage applied to the outer layers one can change the slope of E(k) of this state. As a consequence the direction of current flowing in the single layer graphene can also be changed, the effect that could be useful in practical applications.
