论文标题
质子辐射损伤耐受性宽动态范围SOI像素探测器
Proton radiation damage tolerance of wide dynamic range SOI pixel detectors
论文作者
论文摘要
我们一直在开发SOI像素探测器````intpix''，以供太空使用和通用应用，例如轨道和高能量物理实验的残留应力测量。 Intpix是一种由高抗性SI传感器，SIO2绝缘子和CMOS像素电路组成的单片像素检测器，利用硅在绝缘子（SOI）技术中。我们考虑了使用Intpix观察空间中X射线极化的可能性。当半导体检测器在空间中使用时，它会遭受高能质子造成的辐射损伤。因此，有必要研究INTPIX是否具有较高的辐射公差可在空间中使用。 Intpix8在日本国家量子科学研究所，6 MEV质子的辐照度达到2个KRAD，并评估了性能的退化，例如能量分辨率和像素之间的增益和读数噪声的不均匀性和不均匀性。在500 RAD辐射之后，这是X射线天文卫星的典型寿命，14.4 KEV的能量分辨率降解小于10％，并且在0.1％以内读出噪声和增益的不均匀性和增益在0.1％之内。
We have been developing the SOI pixel detector ``INTPIX'' for space use and general purpose applications such as the residual stress measurement of a rail and high energy physics experiments. INTPIX is a monolithic pixel detector composed of a high-resistivity Si sensor, a SiO2 insulator, and CMOS pixel circuits utilizing Silicon-On-Insulator (SOI) technology. We have considered the possibility of using INTPIX to observe X-ray polarization in space. When the semiconductor detector is used in space, it is subject to radiation damage resulting from high-energy protons. Therefore, it is necessary to investigate whether INTPIX has high radiation tolerance for use in space. The INTPIX8 was irradiated with 6 MeV protons up to a total dose of 2 krad at HIMAC, National Institute of Quantum Science in Japan, and evaluated the degradation of the performance, such as energy resolution and non-uniformity of gain and readout noise between pixels. After 500 rad irradiation, which is the typical lifetime of an X-ray astronomy satellite, the degradation of energy resolution at 14.4 keV is less than 10%, and the non-uniformity of readout noise and gain between pixels is constant within 0.1%.
