论文标题

毫克缺陷的V型MGTI $ _2 $ o $ _4 $ spinel中的表面相位超导性

Surface-phase superconductivity in Mg-deficient V-doped MgTi$_2$O$_4$ spinel

论文作者

Rahaman, A., Paramanik, T., Pal, B., Pal, R., Maji, P., Bera, K., Mallik, S., Goswami, D. K., Pal, A. N., Choudhury, D.

论文摘要

大约五十年前,据报道,liti $ _2 $ o $ _4 $是首先展示具有最高t $ _c $ $ \ $ \ $ \ $ \ $ 13.7 k的超导过渡。超导状态仅在涉及srtio $ _3 $的薄膜超晶格中实现。我们发现,V掺杂毫克$ _ {1-x} $ ti $ _2 $ _2 $ o $ _4 $相位,该阶段被稳定为薄的表面层,并在化学计量和绝缘v-doped mgti $ _2 $ _2 $ _2 $ _2 $ o $ _4 $ bumb bumb bumb bumb bumb bumb bumb the Extry the the $ 16 $ 16还通过紧接在t $ _c $下方的伴随尖锐的磁磁过渡来确认。超导表面层的尖晶石相通过放牧的X射线衍射和微拉曼光谱阐明。尖锐的超导过渡温度($ \ sim $ 4 k)的较小转移,并应用了高磁场(最多9特斯拉),这表明系统的临界场很高,$ \ sim $ 25 tesla。因此,V掺杂的Mg $ _ {1-x} $ ti $ _2 $ o $ _4 $在尖晶石超导体中表现出最高的T $ _C $,并且还具有很高的关键领域。

Around fifty years ago, LiTi$_2$O$_4$ was reported to be first spinel oxide to exhibit a superconducting transition with highest T$_c$ $\approx$ 13.7 K. Recently, MgTi$_2$O$_4$ has been found to be the only other spinel oxide to reveal a superconducting transition with a T$_c$ $\approx$ 3 K, however, its superconducting state is realized only in thin film superlattices involving SrTiO$_3$. We find that a V-doped Mg$_{1-x}$Ti$_2$O$_4$ phase, which gets stabilized as a thin surface layer on top of stoichiometric and insulating V-doped MgTi$_2$O$_4$ bulk sample, exhibits high-temperature superconductivity with T$_c$ $\approx$ 16 K. The superconducting transition is also confirmed through a concomitant sharp diamagnetic transition immediately below T$_c$. The spinel phase of the superconducting surface layer is elucidated through grazing-incidence X-ray diffraction and Micro-Raman spectroscopy. A small shift of the sharp superconducting transition temperature ($\sim$ 4 K) with application of a high magnetic field (upto 9 Tesla) suggests a very high critical field for the system, $\sim$ 25 Tesla. Thus, V-doped Mg$_{1-x}$Ti$_2$O$_4$ exhibits the highest T$_c$ among spinel superconductors and also possesses a very high critical field.

扫码加入交流群

加入微信交流群

微信交流群二维码

扫码加入学术交流群,获取更多资源