论文标题
C3N单层上的氧离解:第一原理研究
Oxygen dissociation on the C3N monolayer: A first-principles study
论文作者
论文摘要
在暴露于空气中,原始C3N单层上的氧解离和氧化结构是C3N工程和表面功能化的不可避免的关键问题,但尚未详细揭示。使用第一原理计算,我们系统地研究了可能的O2吸附位点,各种O2解离途径和氧化结构。证明原始的C3N单层显示出比原始石墨烯更强的O2物理吸附位点,并且表现出更强的O2吸附。在各种解离途径中,最可取的是一个两步过程,该过程涉及具有化学吸附的O2的中间状态,并且屏障低于原始石墨烯的屏障,表明原始的C3N单层比原始石墨烯更容易氧化。此外,我们发现最稳定的氧化结构不是由最可取的解离途径产生的,而是由直接解离过程产生的。这些结果可以推广到使用原子质热力学的广泛温度和压力中。我们的发现加深了对环境条件下2D结晶碳氮化物的化学稳定性的理解,并可以通过掺杂和氧化来提供对表面化学结构量身定制的见解。
The oxygen dissociation and the oxidized structure on the pristine C3N monolayer in exposure to air are the inevitably critical issues for the C3N engineering and surface functionalization yet have not been revealed in detail. Using the first-principles calculations, we have systematically investigated the possible O2 adsorption sites, various O2 dissociation pathways and the oxidized structures. It is demonstrated that the pristine C3N monolayer shows more O2 physisorption sites and exhibits stronger O2 adsorption than the pristine graphene. Among various dissociation pathways, the most preferable one is a two-step process involving an intermediate state with the chemisorbed O2 and the barrier is lower than that on the pristine graphene, indicating that the pristine C3N monolayer is more susceptible to oxidation than the pristine graphene. Furthermore, we found that the most stable oxidized structure is not produced by the most preferable dissociation pathway but generated from a direct dissociation process. These results can be generalized into a wide range of temperatures and pressures using ab initio atomistic thermodynamics. Our findings deepen the understanding of the chemical stability of 2D crystalline carbon nitrides under ambient conditions, and could provide insights into the tailoring of the surface chemical structures via doping and oxidation.