论文标题
固有磁性拓扑量绝缘子中的异常Landau量化
Anomalous Landau quantization in intrinsic magnetic topological insulators
论文作者
论文摘要
内在的磁性绝缘体MN(BI1-XSBX)2TE4在其自旋对齐的强场合作中已被鉴定为单对Weyl Nodes1-4的Weyl Semimetal。 Weyl态的直接结果是薄膜量化中层依赖性的Chern数(C)。 MNBI2TE4薄膜中的先前报道表明,通过增加膜厚度5或将化学势控制到电子掺杂6-8中,可以显示自旋对齐中的较高的C状态。由于磁场中的表面带Landau级别(LLS)的出现使情况变得复杂,因此较高的Chern状态的清晰图像仍然缺失。在这里,我们通过对Mn(BI1-XSBX)2TE4双重设备中的量化状态进行详细分析,报告了具有C = 1状态的可调层依赖性层,与SB取代。在薄膜磁性绝缘体中,可以从表面和大量的自旋极光化的Landau水平谱图中解释观察到的霍尔量化高原(BI1-XSBX)2TE4膜。我们的结果表明,MN(BI1-XSBX)2TE4薄膜为探测对磁性敏感的异常Landau量化物理的高度可调平台。
The intrinsic magnetic topological insulators, Mn(Bi1-xSbx)2Te4, in their spin-aligned strong field configuration have been identified as a Weyl semimetal with single pair of Weyl nodes1-4. A direct consequence of the Weyl state is the layer-dependent Chern number (C) in thin film quantization. Previous reports in MnBi2Te4 thin films revealed the higher C states in the spin alignment by either increasing the film thickness5 or controlling chemical potential into electron doping6-8. A clear picture of the higher Chern states is still missing as the situation is complicated by the emerging of surface band Landau levels (LLs) in magnetic field. Here, we report a tunable layer-dependent of C= 1 state with the Sb substitutions by performing a detailed analysis of the quantization states in Mn(Bi1-xSbx)2Te4 dualgated devices, consistent with the calculations of the bulk Weyl point separations in the compounds. The observed Hall quantization plateaus for our thicker Mn(Bi1-xSbx)2Te4 films under strong magnetic fields can be interpreted from a theory of surface and bulk spin-polarized Landau levels spectrum in thin film magnetic topological insulators. Our results demonstrate that Mn(Bi1-xSbx)2Te4 thin films provide a highly tunable platform for probing the physics of the anomalous Landau quantization that is strongly sensitive to magnetic order.