论文标题

对硅旋转矩之间的空腔介导的ISWAP门的最佳控制

Optimal control of a cavity-mediated iSWAP gate between silicon spin qubits

论文作者

Young, Steve M., Jacobson, N. Tobias, Petta, Jason R.

论文摘要

半导体旋转矩形可以通过超导腔耦合,以产生一个纠缠的两分门。但是,这种操作的保真度将通过各种误差机制,例如电荷和磁噪声,声音,空腔损失,向非Qubit状态的过渡以及对硅中的电子的过渡,激发到其他山谷特征态的各种误差机制。在这里,我们对这些误差源和山谷自由度的影响建模对腔介导的两数量ISWAP门的性能。对于山谷分开的相对于每个量子位置内的互换隧道耦合不足,我们发现山谷激发可能是该双Qubit Gate的忠诚度的限制。此外,我们还展示了门控时间和暴露于各种错误源之间的权衡,确定了最佳的操作机制和设备改进,这将对腔体介导的旋转ISWAP的忠诚产生最大的影响。重要的是,我们发现,尽管电荷噪声和声子松弛的影响有利于在Qubits最类似于旋转的状态下降低对这些噪声源的敏感性,但超细噪声和谷理物理学的组合将最佳状态转移到了充电量子上,将类似于强的旋转量子与更强大的有效的旋转式旋转式搭配时间,从而使该速度可以使得很快就可以使得能够使其成为可能。在此制度中,主要限制是在实施大门时需要避免Landau-Zener过渡。

Semiconductor spin qubits may be coupled through a superconducting cavity to generate an entangling two-qubit gate. However, the fidelity of such an operation will be reduced by a variety of error mechanisms such as charge and magnetic noise, phonons, cavity loss, transitions to non-qubit states and, for electrons in silicon, excitation into other valley eigenstates. Here, we model the effects of these error sources and the valley degree of freedom on the performance of a cavity-mediated two-qubit iSWAP gate. For valley splittings inadequately large relative to the interdot tunnel coupling within each qubit, we find that valley excitation may be a limiter to the fidelity of this two-qubit gate. In addition, we show tradeoffs between gating times and exposure to various error sources, identifying optimal operating regimes and device improvements that would have the greatest impact on the fidelity of the cavity-mediated spin iSWAP. Importantly, we find that while the impact of charge noise and phonon relaxation favor operation in the regime where the qubits are most spin-like to reduce sensitivity to these sources of noise, the combination of hyperfine noise and valley physics shifts the optimal regime to charge-like qubits with stronger effective spin-photon coupling so that gate times can be made as short as possible. In this regime, the primary limitation is the need to avoid Landau-Zener transitions as the gate is implemented.

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