论文标题
对原始笼子化合物FEGA $ _3 $的作用的调查
Investigation of role of antisite disorder in the pristine cage compound FeGa$_3$
论文作者
论文摘要
对照障碍在较大相关的狭窄间隙半导体候选FEGA $ _3 $中的作用已被研究。通过弧形熔炉和连续退火过程合成多晶样品。通过X射线分析对FE和GA位点的职业数量和GA位点的偏差与原始化合物中预期的偏差进行了量化。除此之外，电运输和磁化测量结果表明，FE和GA位点障碍的层次结构从promagnetic半导体到磁性金属的FEGA $ _3 $的基态调节。这些发现是在安德森金属 - 绝缘体过渡和自旋波动的框架内讨论的。
The role of controlled disorder in the strong correlated narrow gap semiconductor candidate FeGa$_3$ has been investigated. Polycrystalline samples were synthesized by the combination of arc-melting furnace and successive annealing processes. Deviations of the occupation number of Fe and Ga sites from those expected in the pristine compound were quantified with X-ray analysis. Besides that, electrical transport and magnetization measurements reveal that hierarchy in Fe and Ga site disorder tunes the ground state of FeGa$_3$ from paramagnetic semiconducting to a magnetic metal. These findings are discussed within the framework of Anderson metal-insulator transitions and spin fluctuations.
