论文标题
范围：启用面向近似的能源有效的STT-RAM写作电路
EXTENT: Enabling Approximation-Oriented Energy Efficient STT-RAM Write Circuit
论文作者
论文摘要
自旋传输扭矩随机访问记忆（STT-RAM）由于其各种特征，例如非挥发性，低泄漏功率，高密度而引起了人们的兴趣。其磁性特性在通过热有效性的STT切换操作中起着至关重要的作用。 STT-RAM在工业适应中的一个主要挑战是高写入能量和潜伏期。在本文中，我们通过利用STT-RAM细胞的随机切换活性以及串联电路级近似来克服这一挑战。我们通过分析针对辐射引起的软误差的写操作的脆弱性并应用低成本改进来实现我们的技术的鲁棒性。由于纳米尺度技术的严重可靠性挑战，在存在CMOS和磁性隧道连接（MTJ）过程变化的情况下，还分析了拟议电路的鲁棒性。与最先进的面积相比，我们在以内存为中心的应用中获得了33.04％和5.47％的STT-RAM写入能量和潜伏期，面积为3.7％。
Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations through thermal effectiveness. A key challenge for STT-RAM in industrial adaptation is the high write energy and latency. In this paper, we overcome this challenge by exploiting the stochastic switching activity of STT-RAM cells and, in tandem, with circuit-level approximation. We enforce the robustness of our technique by analyzing the vulnerability of write operation against radiation-induced soft errors and applying a low-cost improvement. Due to serious reliability challenges in nanometer-scale technology, the robustness of the proposed circuit is also analyzed in the presence of CMOS and magnetic tunnel junction (MTJ) process variation. Compared to the state-of-the-art, we achieved 33.04% and 5.47% lower STT-RAM write energy and latency, respectively, with a 3.7% area overhead, for memory-centric applications.
