论文标题
MNBI $ _2 $ te $ _4 $/bitei接口之间的Exchange Split Dirac和Rashba型表面状态之间的交换式互动
Interplay between exchange split Dirac and Rashba-type surface states in MnBi$_2$Te$_4$/BiTeI interface
论文作者
论文摘要
基于从头算的计算，我们研究了由抗铁磁性拓扑绝缘子MNBI MNBI $ _2 $ _2 $ _4 $和极性半导体Trilayer Bitei组成的Bitei/MNBI2TE4异质结构界面的电子结构。我们发现，在基板和覆盖层之间不同类型的接触中的电子特性上有显着差异。尽管Te-Te界面的情况形成了底物的自然膨胀，但是当Dirac锥状状态主要位于极性覆盖物区域并进行轻微的交换分裂时，Te-I接触是由底物Dirac锥和极性Trilayer的Rashba-type贡献的四波段状态的来源。由于磁性接近性，该状态的两对kramers脱成为，这产生了运输状态的霍尔响应。我们相信，我们的发现为构建新型Spintronic设备提供了新的机会。
Based on the ab initio calculations, we study the electronic structure of the BiTeI/MnBi2Te4 heterostructure interface composed of the anti-ferromagnetic topological insulator MnBi$_2$Te$_4$ and the polar semiconductor trilayer BiTeI. We found significant difference in electronic properties at different types of contact between substrate and the overlayer. While the case of Te-Te interface forms natural expansion of the substrate, when Dirac cone state locates mostly in the polar overlayer region and undergoes slight exchange splitting, Te-I contact is the source of four-band state contributed by the substrate Dirac cone and Rashba-type state of the polar trilayer. Owing to magnetic proximity, the pair of Kramers degeneracies for this state are lifted, what produces Hall response in transport regime. We believe, our findings provide new opportunities to construct novel type spintronic devices.
