论文标题

在三角硅碳化物结构中利用光子带隙以有效的量子纳米光子硬件

Utilizing photonic band gap in triangular silicon carbide structures for efficient quantum nanophotonic hardware

论文作者

Saha, Pranta, Majety, Sridhar, Radulaski, Marina

论文摘要

由于其色中心缺陷的长旋连贯性和单光子发射特性,碳化硅是领先的量子信息材料平台之一。碳化硅在量子网络,计算和传感中的应用取决于有效收集颜色中心发射到单个光学模式中。该平台中的最新硬件开发集中在保持发射极特性并生产三角形设备的角度蚀刻过程上。但是,对于此几何形状中的光传播知之甚少。我们探讨了具有三角形横截面的结构中光子带隙的形成,该结构可以用作在碳化硅中开发有效的量子纳米光硬件的指导原理。此外,我们提出了三个领域的应用:TE-PASS滤波器,TM-PASS滤波器和高度反射的光子晶体镜,可用于有效收集和传播光发射的选择。

Silicon carbide is among the leading quantum information material platforms due to the long spin coherence and single-photon emitting properties of its color center defects. Applications of silicon carbide in quantum networking, computing, and sensing rely on the efficient collection of color center emission into a single optical mode. Recent hardware development in this platform has focused on angle-etching processes that preserve emitter properties and produce triangularly shaped devices. However, little is known about the light propagation in this geometry. We explore the formation of photonic band gap in structures with a triangular cross-section, which can be used as a guiding principle in developing efficient quantum nanophotonic hardware in silicon carbide. Furthermore, we propose applications in three areas: the TE-pass filter, the TM-pass filter, and the highly reflective photonic crystal mirror, which can be utilized for efficient collection and propagating mode selection of light emission.

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