论文标题
使用深度耗尽的石墨烯 - 氧化物 - 氧化物 - 氧化物连接器检测高能电离辐射
Detection of High Energy Ionizing Radiation using Deeply Depleted Graphene-Oxide-Semiconductor Junctions
论文作者
论文摘要
石墨烯的线性带结构和二维状态密度为传感电荷提供了隐含的优势。在这里，这些优点在深度耗尽的石墨烯 - 氧化物 - 氧化 - 氧化型 - 氧化物探测器架构结构中杠杆化，以感知通过电离辐射产生的载体。具体而言，在用20 MeV Si4+离子辐射过程中，分析了基于硅D2GOS连接的室温响应。证明了剂量的检测范围为12-1200离子，其设备功能维持，没有实质性降解。为了了解设备响应，D2GOS像素是通过电气表征，拉曼光谱和光电流映射的结合来表征辐照后表征的。这种结合的表征方法强调了由于对石墨烯的照射而引起的，同时突出了入射离子与硅吸收器之间相互作用的性质。
Graphene's linear bandstructure and two-dimensional density of states provide an implicit advantage for sensing charge. Here, these advantages are leveraged in a deeply depleted graphene-oxide-semiconductor (D2GOS) junction detector architecture to sense carriers created by ionizing radiation. Specifically, the room temperature response of the silicon-based D2GOS junction is analyzed during irradiation with 20 MeV Si4+ ions. Detection was demonstrated for doses ranging from 12-1200 ions with device functionality maintained with no substantive degradation. To understand the device response, D2GOS pixels were characterized post-irradiation via a combination of electrical characterization, Raman spectroscopy, and photocurrent mapping. This combined characterization methodology underscores the lack of discernible damage caused by irradiation to the graphene while highlighting the nature of interactions between the incident ions and the silicon absorber.
