论文标题
在外观上移动$β$ -GA $ _2 $ o $ _3 $和$β$ - （Al $ _x $ ga $ _1-x $）$ _ 2 $ _ 2 $ o $ _3 $ films上
Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ Films
论文作者
论文摘要
我们报告了记录创纪录的低电阻欧马人的接触，以使si掺杂的$β$ -GA $ -GA $ _2 $ _2 $ $ _3 $和$β$ - （Al $ _x $ GA $ _1-x $）转移长度测量（TLM）模式是在浓重的Si掺杂同性恋$β$β$ -GA $ _2 $ _2 $ o $ _3 $胶片上制造的，具有电子浓度（n），范围为1.77至3.23e20 cm^-3。记录低特异性接触电阻和总接触电阻（RC）为1.62E-7 OHM.CM^2和0.023 OHM.MM，以$β$ -GA $ _2 $ _2 $ o $ _3 $：n> 3e20 cm^-3的SI胶片以$β$ -GA $ _2 $ _2 $ _3 $：SI。 TLM结构还在浓度紧张的$β$ - （Al $ _x $ ga $ _1-x $）上制造，$ _ 2 $ _3 $ _3 $（x = 12％，17％和22％）电影。该膜成分为12％（n = 1.23e20 cm^-3）显示\ r {ho} c为5.85e-6 ohm.cm^2，但增加到2.19e-4 OHm.cm^2，对于具有22％Al组成的层。将样品退火后金属沉积通常导致接触电阻的降低，但是对于高含量$β$ - （Al $ _x $ ga $ _1-x $）$ _ 2 $ _ 2 $ o $ _3 $，接触电阻在退火过程后没有显着变化。在这项工作中测得的低接触电阻值对于制造高频功率设备非常有前途。
We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ epitaxial films. Transfer length measurement (TLM) patterns were fabricated on the heavily Si-doped homoepitaxial $β$-Ga$_2$O$_3$ films with electron concentration (n) ranging from 1.77 to 3.23e20 cm^-3. Record low specific contact resistance and total contact resistance (Rc) of 1.62e-7 Ohm.cm^2 and 0.023 Ohm.mm were realized for $β$-Ga$_2$O$_3$: Si films with n > 3e20 cm^-3. TLM structures were also fabricated on heavily Si doped coherently strained $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ (x=12%, 17% and 22%) films. The film with 12% Al composition (n=1.23e20 cm^-3) showed \r{ho}c of 5.85e-6 Ohm.cm^2, but it increased to 2.19e-4 Ohm.cm^2 for a layer with a 22% Al composition. Annealing the samples post metal deposition has generally led to a decrease in contact resistance, but for high Al content $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$, the contact resistance did not change significantly after the annealing process. The low contact resistance values measured in this work are very promising for the fabrication of high frequency power devices.
