论文标题
质子引起的深色计数率降解150 nm CMOS单光雪崩二极管
Proton induced Dark Count Rate degradation in 150-nm CMOS Single-Photon Avalanche Diodes
论文作者
论文摘要
提出了对使用150 nm CMOS工艺制造的单光子雪崩二极管（SPADS）设备的质子辐照效应。在几个包含两个不同连接布局的Spads阵列的测试芯片样本上，使用了20 MeV和24 MEV的质子进行了辐照运动。黑暗计数率分布已被分析是位移损伤剂量的函数。退火和冷却已被调查为缓解损伤方法。我们还通过太空辐射模拟讨论了此类设备对几个太空任务案例研究的适用性。
Proton irradiation effects on a Single-Photon Avalanche Diodes (SPADs) device manufactured using a 150-nm CMOS process are presented. An irradiation campaign has been carried out with protons of 20 MeV and 24 MeV on several samples of a test chip containing SPADs arrays with two different junction layouts. The dark count rate distributions have been analyzed as a function of the displacement damage dose. Annealing and cooling have been investigated as possible damage mitigation approaches. We also discuss, through a space radiation simulation, the suitability of such devices on several space mission case-studies.
