论文标题
SIC的选择性激光反应综合,SI $ _3 $ N $ _4 $和HFC/SIC复合材料用于增材制造
Selective Laser Reaction Synthesis of SiC, Si$_3$N$_4$ and HfC/SiC Composites for Additive Manufacturing
论文作者
论文摘要
研究了选择性激光反应烧结技术(SLR)技术,用于生产包括SIC,SI $ _3 $ n $ _4 $的近净形非氧化陶瓷以及HFC/SIC复合材料,这些复合材料可能与先进的粉末床床融合添加剂制造工艺兼容。共价陶瓷的反应键层是使用选择性激光加工和层形成过程中发生的原位反应产生的。在SLR期间,将由金属和/或金属氧化物粉末组成的前体材料塑造成粉末床,以转换为非氧化陶瓷层。激光处理用于启动CH4或NH3气体中前体颗粒的同时化学转化和局部颗粒间键合。研究了与反应合成过程(前体化学,气体固体和气体液体合成机制,前体蒸气压力)有关的几个因素。结果表明,在单个成分前体的原位转换过程中发生的体积变化对表面层微结构产生了负面影响。为了绕过伴随Si或HF转换(在转换时扩展)或SIO $ _X $(在转换期间收缩)转化的内部应力和破裂,使用前体成分的优化比率来产生附近的等量级转换为产品阶段。结果表明,在适当的加工条件和前体选择下,可以通过单步兼容的技术来实现近网状SIC和SIC复合材料的形成。
Selective laser reaction sintering techniques (SLRS) techniques were investigated for the production of near net-shape non-oxide ceramics including SiC, Si$_3$N$_4$, and HfC/SiC composites that might be compatible with prevailing powder bed fusion additive manufacturing processes. Reaction bonded layers of covalent ceramics were produced using in-situ reactions that occur during selective laser processing and layer formation. During SLRS, precursor materials composed of metal and/or metal oxide powders were fashioned into powder beds for conversion to non-oxide ceramic layers. Laser-processing was used to initiate simultaneous chemical conversion and local interparticle bonding of precursor particles in CH4 or NH3 gases. Several factors related to the reaction synthesis process (precursor chemistry, gas-solid and gas-liquid synthesis mechanisms, precursor vapor pressures) were investigated in relation to resulting microstructures and non-oxide yields. Results indicated that the volumetric changes which occurred during in-situ conversion of single component precursors negatively impacted the surface layer microstructure. To circumvent the internal stresses and cracking that accompanied the conversion of Si or Hf (that expands upon conversion) or SiO$_x$ (that contracts during conversion), optimized ratios of the precursor constituents were used to produce near isovolumetric conversion to the product phase. The results demonstrate that under appropriate processing conditions and precursor selection, the formation of near net-shape SiC and SiC composites might be achieved through single-step AM-compatible techniques.