论文标题
电气功能可切换磁性域壁存储器
Electrically function switchable magnetic domain-wall memory
论文作者
论文摘要
最终用户在信息时代保护其信息的强烈希望是更加多的记忆。特别是，从可重写到仅读取功能的比特级可切换内存允许最终用户防止任何重要的数据被篡改。但是，尚未报告这种可切换内存。我们证明了可重写的函数可以通过在U形域壁存储器中的足够大电流脉冲转换为仅读取函数，该脉冲由不对称的PT/CO/RU/ALOX异质结构组成，具有较强的Dzyaloshinskii-Moriya相互作用。设计和制造了4英寸SI/SIO2底物上的晶圆尺度可切换磁性域壁存储器阵列。此外，我们确认信息可以根据最终用户的安全需要以可重写或仅阅读状态的状态存储。我们的工作不仅为个人机密数据提供了解决方案，还为开发多功能Spintronic设备的方式铺平了道路。
More-versatile memory is strongly desired for end-users to protect their information in the information era. In particular, bit-level switchable memory, from rewritable to read-only function, allows end-users to prevent any important data from being tampered with. However, no such switchable memory has been reported. We demonstrated the rewritable function can be converted into a read-only function by a sufficiently large current pulse in a U-shaped domain-wall memory composed of an asymmetric Pt/Co/Ru/AlOx heterostructure with strong Dzyaloshinskii-Moriya interaction. Wafer-scale switchable magnetic domain-wall memory arrays on 4-inch Si/SiO2 substrate were designed and fabricated. Furthermore, we confirmed the information can be stored in rewritable or read-only state at bit-level according to the security-needs of end-users. Our work not only provides a solution for personal confidential data, but also paves the way for developing multi-functional spintronic devices.
