论文标题

p x n型横向热电学在II型Weyl半含量Tairte4中

p x n-Type Transverse Thermoelectrics in a Type-II Weyl Semimetal TaIrTe4

论文作者

Mutch, Josh, Chen, Wei-Chih, Huang, Cheng-Yi, Malinowski, Paul, Chen, Cheng-Chien, Chu, Jiun-Haw

论文摘要

P X n型材料是指具有p型seebeck系数的材料,沿一个方向沿正交方向的N型系数。这种类型的材料允许横向热电响应,这对于能源应用非常需要。在这里,我们报告了tairte4中P X N型行为的观察,这是一种II型Weyl Semimetal,具有平面内的热电器各向异性S $ _ {xx} $ - S $ _ {yy} $达到200k的最大值40 $μ$ v/k。有趣的是。我们发现在类似的化合物Nbirte4中不存在这种P X N型行为。这两种材料中P X N型行为的存在和不存在与密度功能理论计算一致,这进一步预测,这两种化合物中的热电学各向异性可以通过电子掺杂增强高达130美元$ $ V/k。如此强大的热电器各向异性源于P型和N型载体的存在,每个载体都在一个方向上具有较高的迁移率。这些结果表明,尽管II型Weyl半准相不能保证P X N型行为的存在,但其独特的频带结构为工程师提供了成分,并优化了这种现象。

p x n-type materials refer to materials with a p-type Seebeck coefficient in one direction and a n-type coefficient in the orthogonal direction. This type of materials allows for a transverse thermoelectric response, which is highly desirable for energy applications. Here, we report the observation of p x n-type behavior in TaIrTe4, a type-II Weyl semimetal, with an in-plane thermopower anisotropy S$_{xx}$-S$_{yy}$ reaches a maximum value 40$μ$V/K at 200K. Intriguingly. we found that such a p x n-type behavior is absent in the similar compound NbIrTe4. The presence and absence of p x n-type behavior in these two materials are consistent with density functional theory calculations, which further predict that the thermopower anisotropy in both compounds can be enhanced up to 130$μ$V/K by electron doping. Such a strong thermopower anisotropy originates from the presence of both p-type and n-type carriers, each with high mobility in one direction. These results suggest that although type-II Weyl semimetal phase does not guarantee the existence of p x n-type behavior, its unique band structure provides the ingredient to engineer and optimize this phenomenon.

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