论文标题
整数量子厅效应和增强的量子CD3AS2膜中的G因子增强
Integer quantum Hall effect and enhanced g-factor in quantum confined Cd3As2 films
论文作者
论文摘要
我们研究了CD3AS2薄膜中的整数量子大厅效应在强到中度量子约束的条件下（10 nm，12 nm，15 nm）。在所有薄膜中，我们都会在自旋偏振最低的Landau水平（填充因子ν= 1）中观察到整数量子大厅的效应，并且在自旋排级较高的指数Landau水平上，甚至具有填充因子（ν= 2,4,6）。随着量子限制的增加，我们还观察到在ν= 3处的Landau水平自旋变性的提升，表现为纵向和霍尔电阻率中异常的出现。紧密结合的计算表明，增强的G因子可能是由量子限制和附近子带的校正的组合产生的。当化学电位接近电荷中性点时，我们还对磁场引起的磁场引起的过渡。
We investigate the integer quantum Hall effect in Cd3As2 thin films under conditions of strong to moderate quantum confinement (thicknesses of 10 nm, 12 nm, 15 nm). In all the films, we observe the integer quantum Hall effect in the spin-polarized lowest Landau level (filling factor ν = 1) and at spin-degenerate higher index Landau levels with even filling factors (ν = 2,4,6). With increasing quantum confinement, we also observe a lifting of the Landau level spin degeneracy at ν = 3, manifest as the emergence of an anomaly in the longitudinal and Hall resistivity. Tight-binding calculations show that the enhanced g-factor likely arises from a combination of quantum confinement and corrections from nearby subbands. We also comment on the magnetic field induced transition from an insulator to a quantum Hall liquid when the chemical potential is near the charge neutrality point.
