论文标题
纳米对象锋利电子发射器的隧道屏障的一般形式
General form of the tunnelling barrier for nanometrically sharp electron emitters
论文作者
论文摘要
来自纳米尺度对象的场电子发射偏离了经典发射理论的预测，因为隧道区域内的静电势曲线和图像电位偏离了平面。这促使在潜在障碍中包含其他校正项。在类似尖端的旋转对称表面的顶点，这些术语与（单个）局部发射极曲率成正比。本文概括了这种关系，表明对于任何发射极几何，校正项的系数由平均曲率（即两个主要曲率的平均值）给出。
Field electron emission from nanometer-scale objects deviates from the predictions of the classical emission theory as both the electrostatic potential curves within the tunneling region and the image potential deviates from the planar one. This impels the inclusion of additional correction terms in the potential barrier. At the apex of a tip-like rotationally symmetric surface, these terms are proportional to the (single) local emitter curvature. The present paper generalizes this relation, showing that for any emitter geometry, the coefficient of the correction terms is given by the mean curvature, i.e. the average of the two principal curvatures.
