论文标题
单层Mosi的强限制激子$ _2 $ z $ _4 $（z = pnictogen）
Strongly bound excitons in monolayer MoSi$_2$Z$_4$ (Z = pnictogen)
论文作者
论文摘要
二维材料中的介电筛选减少了，可实现绑定的激子，即使在室温下，也可以修改其光吸收和光电子响应。在这里，我们演示了新发现的合成Mosi $ _2 $ z $ _4 $（z = n，p和as as）系列材料的单层家族的带隙中存在激烈的兴奋子。对于最低的能量激子共振，所有三个单层都支持几个明亮且强烈的激子，其结合能从1 eV到1.35 eV不等。在增加泵通量时，激子结合能将重新归一化，导致红移蓝光跨界。我们的研究表明，Mosi $ _2 $ z $ _4 $系列单层提供了令人兴奋的测试床，用于探索强限制的激子及其非平衡动力学的物理。
Reduced dielectric screening in two-dimensional materials enables bound excitons, which modifies their optical absorption and optoelectronic response even at room temperature. Here, we demonstrate the existence of excitons in the bandgap of the monolayer family of the newly discovered synthetic MoSi$_2$Z$_4$ (Z = N, P, and As) series of materials. All three monolayers support several bright and strongly bound excitons with binding energies varying from 1 eV to 1.35 eV for the lowest energy exciton resonances. On increasing the pump fluence, the exciton binding energies get renormalized, leading to a redshift-blueshift crossover. Our study shows that the MoSi$_2$Z$_4$ series of monolayers offer an exciting test-bed for exploring the physics of strongly bound excitons and their non-equilibrium dynamics.
