论文标题

光引起的巨型和持续变化在Ni/batio3多效异质结构中的匡威磁弹性效应

Light-induced giant and persistent changes in the converse magnetoelastic effects in Ni/BaTiO3 multiferroic heterostructure

论文作者

Bagri, Anita, Jana, Anupam, Panchal, Gyanendra, Raj, Rakhul, Gupta, Mukul, Reddy, V. R., Phase, Deodatta Moreshwar, Choudhary, Ram Janay

论文摘要

人工多效异质结构中的磁弹性和磁电耦合为设备应用(例如磁场传感器和电气写入磁性读取存储器设备)提供了有价值的功能。在铁电磁/铁电异质结构中,应变介导的耦合利用铁电相和磁磁相/压电磁相中的压电/电践图。这些组合效应的这种真实性可以通过外部扰动(例如电场,温度或磁场)来操纵。在这里,我们证明了这些效果在可见,相干和偏振光下的遥控可调节性。结构域相关的Ni/batio3异质结构的表面和大量磁研究表明,通过匡威压电,磁弹性耦合和匡威磁磁体的互合效应,该系统对光照明非常敏感。定义明确的铁弹性结构域结构在膜生长过程中通过界面应变转移完全转移从四方铁电到磁膜上。可见光照明用于通过铁电中的光诱导的域壁运动来操纵原始的铁磁微结构,因此,铁磁层中的域壁运动。我们的发现模仿有吸引力的遥控铁电随机访问记忆写入和磁随机存储器读取应用程序场景,因此可以被证明是室温设备应用程序的新视角。

Magnetoelastic and magnetoelectric coupling in the artificial multiferroic heterostructures facilitate valuable features for device applications such as magnetic field sensors and electric write magnetic-read memory devices. In a ferromagnetic/ferroelectric heterostructures, the strain mediated coupling exploits piezoelectricity/electrostriction in ferroelectric phase and magnetostriction/piezomagnetism in ferromagnetic phase. Such verity of these combined effect can be manipulated by an external perturbation, such as electric field, temperature or magnetic field. Here, we demonstrate the remote-controlled tunability of these effects under the visible, coherent and polarized light. The combined surface and bulk magnetic study of domain-correlated Ni/BaTiO3 heterostructure reveals that the system is strong sensitive about the light illumination via the combined effect of converse piezoelectric, magnetoelastic coupling and converse magnetostriction. Well-defined ferroelastic domain structure is fully transferred from a tetragonal ferroelectric to magnetostrictive layer via interface strain transfer during the film growth. The visible light illumination is used to manipulate the original ferromagnetic microstructure by the light-induced domain wall motion in ferroelectric, consequently the domain wall motion in the ferromagnetic layer. Our findings mimic the attractive remote-controlled ferroelectric random-access memory write and magnetic random-access memory read application scenarios, hence, can be proven as a novel perspective for room temperature device applications.

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