学术文献库

We study theoretically the electronic structure of three-dimensional (3D) higher-order topological insulators in the presence of step edges. We numerically find that a 1D conducting state with a helical spin structure, which also has a linear dispersion near the zero energy, emerges at a step edge and on the opposite surface of the step edge. We also find that the 1D helical conducting state on the opposite surface of a step edge emerges when the electron hopping in the direction perpendicular to the step is weak. In other words, the existence of the 1D helical conducting state on the opposite surface of a step edge can be understood by considering an addition of two different-sized independent blocks of 3D higher-order topological insulators. On the other hand, when the electron hopping in the direction perpendicular to the step is strong, the location of the emergent 1D helical conducting state moves from the opposite surface of a step edge to the dip ($270^{\circ}$ edge) just below the step edge. In this case, the existence at the dip below the step edge can be understood by assigning each surface with a sign ($+$ or $-$) of the mass of the surface Dirac fermions. These two physical pictures are connected continuously without the bulk bandgap closing. Our finding paves the way for on-demand creation of 1D helical conducting states from 3D higher-order topological insulators employing experimental processes commonly used in thin-film devices, which could lead to, e.g., a realization of high-density Majorana qubits.