论文标题
在磁性半分CR1+DTE2中,热电器的大型抗铁磁波动增强
Large antiferromagnetic fluctuation enhancement of the thermopower at a critical doping in magnetic semimetal Cr1+dTe2
论文作者
论文摘要
CR1+DTE2是一种自我缩放的过渡金属二进制基因,它在其半金属带结构中载有可调电子填充和磁性。最近,角度分辨光发射光谱(ARPES)的研究已经在该半金段结构中揭示了相对于化学势随着CR掺杂而增加的系统转移。该报告介绍了不同CR1+DTE2组成的纵向热电器SXX的温度和磁场依赖性。我们表明,随着掺杂的增加,SXX的迹象在d 〜0.5的临界掺杂水平上从正变为阴性。这种观察到的热电器中观察到的掺杂依赖性趋势与ARPES半金属带结构的演变一致。重要的是,在d〜0.5左右也观察到热电反应的异常增强。在磁性半准CR1+DTE2中揭示了来自磁力测定和ARPES测量的信息,掺杂水平DC(〜0.5)的临界性质的存在,其中抗铁磁波动和接近富集的PseudoGAP形成在增强热能热能能量中具有潜在的至关重要。
Cr1+dTe2 is a self-intercalated transition metal dichalcogenide that hosts tunable electronic filling and magnetism in its semimetallic band structure. Recent angle-resolved photoemission spectroscopy (ARPES) studies have unveiled a systematic shift in this semimetallic band structure relative to the chemical potential with increased Cr doping. This report presents the temperature and magnetic field dependence of the longitudinal thermopower Sxx for different Cr1+dTe2 compositions. We show that as doping increases, the sign of Sxx changes from positive to negative at the critical doping level of d ~ 0.5. This observed doping-dependent trend in the thermopower is consistent with the evolution of the semimetallic band structure from ARPES. Importantly, an anomalous enhancement of the thermoelectric response is also observed around d~0.5. Combining information from magnetometry and ARPES measurements, existence of the critical nature of the doping level dc (~0.5) is unveiled in magnetic semimetal Cr1+dTe2, where antiferromagnetic fluctuation and near-Fermi-energy pseudogap formation play a potential vital role in enhancing thermoelectric energy conversion.