论文标题

二维旋转-3/2重孔的非线性异常大厅效应

Non-linear anomalous Hall effect of two-dimensional spin-3/2 heavy holes

论文作者

Gholizadeh, Sina, Culcer, Dimitrie

论文摘要

我们在锌半导体纳米结构中Spin-3/2重孔的电响应中确定了相当大的非线性异常霍尔效应。响应是由四极相互作用与TD对称启用的电场的相互作用驱动的。直到最近,这种相互作用可忽略不计,它反映了反转对称性的破坏,并且在二维中会导致对平面G因子的电场依赖性校正。可以通过磁性掺杂或使用矢量磁体观察到该效果,即使对于小的垂直磁场,也可以在其中与拓扑材料相当。

We identify a sizable non-linear anomalous Hall effect in the electrical response of spin-3/2 heavy holes in zincblende semiconductor nanostructures. The response is driven by a quadrupole interaction with the electric field enabled by Td-symmetry. This interaction, until recently believed to be negligible, reflects inversion symmetry breaking and in two dimensions results in an electric-field dependent correction to the in-plane g-factor. The effect can be observed in state-of-the-art heterostructures, either via magnetic doping or by using a vector magnet, where even for small perpendicular magnetic fields it is comparable in magnitude to topological materials.

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