论文标题
抗铁磁绝缘子中隐藏的浆果曲率引起的层厅效应
Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators
论文作者
论文摘要
图层霍尔效应描述了在不同层处自发偏转到相对侧的电子，在垂直电场下的MNBI $ _2 $ _2 $ _4 $ _4 $ THINFILMS中已经在实验中报告了[Gao等，Nature 595，521（2021）]。在这里，我们根据所谓的隐藏浆果曲率以及材料设计原理揭示了图层大厅效应的普遍起源。因此，它在动量空间中产生零浆果曲率，但在真实空间中，非零锁定的隐藏浆果曲率。我们表明，与琐碎的绝缘子相比，抗铁磁拓扑绝缘子的层效应显着增强。我们的普遍图片提供了一个范式，可以通过全球和局部对称性之间的相互作用来揭示隐藏的物理学，并且可以在各种情况下进行概括。
The layer Hall effect describes electrons spontaneously deflected to opposite sides at different layers, which has been experimentally reported in the MnBi$_2$Te$_4$ thinfilms under perpendicular electric fields [Gao et al., Nature 595, 521 (2021)]. Here, we reveal a universal origin of the layer Hall effect in terms of the so-called hidden Berry curvature, as well as material design principles. Hence, it gives rise to zero Berry curvature in momentum space but nonzero layer-locked hidden Berry curvature in real space. We show that compared to that of a trivial insulator, the layer Hall effect is significantly enhanced in antiferromagnetic topological insulators. Our universal picture provides a paradigm for revealing the hidden physics as a result of the interplay between the global and local symmetries, and can be generalized in various scenarios.
