论文标题

全dielectric metasurfaces中的准结合状态下的高Q共振

High-Q Resonances Governed by the Quasi-Bound States in the Continuum in All-Dielectric Metasurfaces

论文作者

Fang, C., Yang, Q., Yuan, Q., Gan, X., Zhao, J., Shao, Y., Liu, Y., Han, G., Hao, Y.

论文摘要

据报道,在具有各种断裂对称块的硅元表面中实现高Q共振。理论分析表明,跨度的尖锐共振源自连续体(BIC)中受对称保护的结合状态,而磁偶极子则占主导地位。损坏对称块中的缺陷尺寸较小会引起较大的Q因子的共振。重要的是,可以通过更改结构参数来调整这种关系,这是由于BIC的拓扑配置的调节而引起的。因此,通过优化纳米结构的维度可以轻松实现3,000多个Q因子。在这种尖锐的共振下,图案结构中第三个谐波产生信号的强度可能是平坦硅膜的368倍。拟议的策略和基本理论可以开放新的途径,以实现超蓝谐共振,这可能会促进潜在的非线性,激光行动和感应的潜在元设备的发展。

The realization of high-Q resonances in a silicon metasurface with various broken-symmetry blocks is reported. Theoretical analysis reveals that the sharp resonances in the metasurfaces originate from symmetry-protected bound states in the continuum (BIC) and the magnetic dipole dominates these peculiar states. A smaller size of the defect in the broken-symmetry block gives rise to the resonance with a larger Q factor. Importantly, this relationship can be tuned by changing the structural parameter, resulting from the modulation of the topological configuration of BICs. Consequently, a Q factor of more than 3,000 can be easily achieved by optimizing dimensions of the nanostructure. At this sharp resonance, the intensity of the third harmonic generation signal in the patterned structure can be 368 times larger than that of the flat silicon film. The proposed strategy and underlying theory can open up new avenues to realize ultrasharp resonances, which may promote the development of the potential meta-devices for nonlinearity, lasing action, and sensing.

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