论文标题
从天然范德华异质结构观察光致发光
Observation of Photoluminescence from a Natural van der Waals Heterostructure
论文作者
论文摘要
由二维(2D)材料组成的Van der waals异质结构提供了一个平台,可通过具有独特的电子特性的设计获取材料。 Franckeite(FR)是一种天然存在的范德华异质结构,由两个不同的交替堆叠的半导体层组成。 (i)sns $ _2 $ layer和(ii)pb $ _3 $ sbs $ _4 $。尽管异质结构中的两个层都是半导体,但Franckeite的光致发光仍然难以捉摸。在这里,我们首次报告了Franckeite的光致发光(PL)的观察。我们观察到〜1.93 eV和〜2.11 eV的两个PL峰。通过将温度从1.5 k变为80 K,我们发现PL峰位置红移和积分强度随着温度的增加而缓慢降低。我们观察到光致发光强度对激发激光功率的线性依赖性,表明光致发光起源于fr的sns $ _2 $层中的自由激素。通过将FR的PL与单层MOS $ _2 $的PL进行比较,我们确定来自FR的PL量子效率比单层MOS $ _2 $的PL量效率低。我们的研究提供了对复杂自然发生的范德华异质结构中光学行为的基本理解,并可能为开发具有量身定制性能的纳米级光学和光电设备铺平道路。
Van der Waals heterostructures comprised of two-dimensional (2D) materials offer a platform to obtain materials by design with unique electronic properties. Franckeite (Fr) is a naturally occurring van der Waals heterostructure comprised of two distinct alternately stacked semiconducting layers; (i) SnS$_2$ layer and (ii) Pb$_3$SbS$_4$. Though both layers in the heterostructure are semiconductors, the photoluminescence from Franckeite remains elusive. Here, we report the observation of photoluminescence (PL) from Franckeite for the first time. We observed two PL peaks at ~ 1.93 eV and ~ 2.11 eV. By varying the temperature from 1.5 K to 80 K, we found that the PL peak position redshifts and the integrated intensity decreases slowly as we increase the temperature. We observed linear dependence of photoluminescence integrated intensity on excitation laser power indicating that the photoluminescence is originating from free excitons in the SnS$_2$ layer of Fr. By comparing the PL from Fr with the PL from a monolayer MoS$_2$, we determined that the PL quantum efficiency from Fr is an order of magnitude lower than that of a monolayer MoS$_2$. Our study provides a fundamental understanding of the optical behavior in a complex naturally occurring van der Waals heterostructure, and may pave an avenue toward developing nanoscale optical and optoelectronic devices with tailored properties.