论文标题
离子轰击半导体时表面粗糙的抑制
Suppression of surface roughening during ion bombardment of semiconductors
论文作者
论文摘要
离子束通常用于处理半导体，尤其是溅射，离子植入和纳米结构的直接作用。但是，离子束技术的效用受晶体损伤和表面粗糙的限制。通过在升高温度下进行照射可以减少或消除损害。但是，在这些条件下，由于ADATOM和表面空缺的热活动性，表面粗糙是高度问题的。在这里，我们使用氢气解决了这一问题，氢气用于稳定表面质量流量并在离子对元素和复合半导体的离子轰击过程中抑制粗糙。我们在离子束处理过程中实现了光滑的表面，并证明可以通过使用远程等离子体源对H2气体进行激进的H2气体来增强该方法。我们的方法广泛适用，并扩展了离子光束技术的实用性，用于处理和制造功能材料和纳米结构。
Ion beams are used routinely for processing of semiconductors, particularly sputtering, ion implantation and direct-write fabrication of nanostructures. However, the utility of ion beam techniques is limited by crystal damage and surface roughening. Damage can be reduced or eliminated by performing irradiation at elevated temperatures. However, at these conditions, surface roughening is highly problematic due to thermal mobility of adatoms and surface vacancies. Here we solve this problem using hydrogen gas, which we use to stabilize surface mass flow and suppress roughening during ion bombardment of elemental and compound semiconductors. We achieve smooth surfaces during ion-beam processing, and show that the method can be enhanced by radicalizing H2 gas using a remote plasma source. Our approach is broadly applicable, and expands the utility of ion beam techniques for the processing and fabrication of functional materials and nanostructures.
