论文标题
使用MO2C纳米片和GAN缓冲液层保护和增强光电催化氮还原为Ingan纳米线的氨的性能
Protecting and Enhancing the Photoelectrocatalytic Nitrogen Reduction to Ammonia Performance of InGaN Nanowires using Mo2C Nanosheets and GaN Buffer Layer
论文作者
论文摘要
N2对氨（NH3）的光电催化（PEC）正在成为克服标准Haber-Bosch方法的潜在替代方法。在这种通信中，用碳化物钼（MO2C）共催化剂辅助氮化酰胺（INGAN）纳米线的钼（MO2C）均匀的Solar N2还原。辅助MO2C对Ingan NWS的影响捕捉了黑暗电流，并证明了照明下的饱和电流已短暂阐明。对于MO2C/GAN/INGAN异质结构，在-0.2 V与可逆的氢电极相比，在-0.2 V中实现了7.2 GH-1CM-2的大型NH3生产7.2 GH-1CM-2。值得注意的是，在长期的时间表测定法分析中，提出的异质结构还例证了出色的稳定性和可重复性，具有出色的选择性。此外，对MO2C和Ingan NWS之间的GAN缓冲层的掺入进行了深入研究。从密度功能理论（DFT）分析中，GAN缓冲层的掺入有助于适当的带边缘位置，用于转移光生荷载体从Ingan到MO2C共催化剂，以及MO2C的独特3D轨道非常适合持有N2，以有效地减少NH3。
Photoelectrocatalytic (PEC) reduction of N2 to ammonia (NH3) is emerging as the potential alternative to overcome the standard Haber-Bosch approach. In this communication, solar N2 reduction was demonstrated with molybdenum carbide (Mo2C) co-catalyst assisted indium gallium nitride (InGaN) nanowires. The effect of aiding Mo2C on InGaN NWs arrests the dark current and demonstrated the saturation current under illumination was briefly elucidated. Large NH3 production of 7.2 gh-1cm-2 with high Faradaic efficiency of 12.6 % was realized at -0.2 V vs. reversible hydrogen electrode for the Mo2C/GaN/InGaN heterostructure. Notably, the proposed heterostructure also exemplifies excellent stability and reproducibility with excellent selectivity in the long-term chronoamperometry analysis. Further, the incorporation of GaN buffer layer in between Mo2C and InGaN NWs was deeply investigated. From Density Functional Theory (DFT) analysis, the incorporation of GaN buffer layer aids the suitable band edge position for the transfer of photogenerated charge carrier from InGaN to Mo2C co-catalyst, and unique 3d orbital of Mo2C is highly suitable to hold N2 for effective reduction to NH3.
