论文标题
多孔拓扑绝缘体中的相干长度增加
Increased Phase Coherence Length in a Porous Topological Insulator
论文作者
论文摘要
通过引入纳米级孔隙率增加了BI2TE3薄膜的表面积。在生长和多孔样品（23和70 nm）上进行了依赖温度的电阻率和磁转运测量。多孔样品的纵向电阻率变得更加金属，表明表面积增加导致运输更像表面。在所有样品中都存在弱抗钙化（WAL），并且相干长度在多孔样品中加倍。这种增加可能是由于狄拉克表面状态的费米速度较高。我们的结果表明，引入纳米性质不会破坏拓扑表面状态，而是会增强它们，从而使这些纳米结构化材料有望用于低能电子，旋转三位型和热电话。
The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal resistivity of the porous samples became more metallic, indicating the increased surface area resulted in transport that was more surface-like. Weak antilocalization (WAL) was present in all samples, and remarkably the phase coherence length doubled in the porous samples. This increase is likely due to the large Fermi velocity of the Dirac surface states. Our results show that the introduction of nanoporosity does not destroy the topological surface states but rather enhances them, making these nanostructured materials promising for low energy electronics, spintronics and thermoelectrics.
